Tetracene Based OTFT with Nd2O3-dielectric Layer

نویسندگان

  • R. Sarma
  • D. Saikia
  • P. Saikia
  • P. K. Saikia
  • R. Sharma
چکیده

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10 cm/V.s, ON-OFF ratio 3.3x10, sub-threshold swing 0.06 V/decade and hole concentration 8.74x10 cm.

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تاریخ انتشار 2010